IKW50N65EH5XKSA1 IGBT Transistor INDUSTRI 14
♠ Deskripsi Produk
Atribut Produk | Nilai Atribut |
Produsen: | Infineon |
Kategori produk: | Transistor IGBT |
Teknologi: | Si |
Paket / Case: | TO-247-3 |
Gaya Pemasangan: | Liwat Lubuk |
Konfigurasi: | Tunggal |
Kolektor- Emitor Tegangan VCEO Maks: | 650 V |
Tegangan Saturasi Kolektor-Emitor: | 1.65 V |
Tegangan Emitor Gerbang Maksimum: | 20 V |
Arus Kolektor Kontinu ing 25 C: | 80 A |
Pd - Dissipasi Daya: | 275 W |
Suhu Operasi Minimal: | - 40 C |
Suhu operasi maksimum: | + 175 C |
Seri: | Trenchstop IGBT5 |
Packaging: | tabung |
Merk: | Teknologi Infineon |
Gate-Emitter Leakage Current: | 100 nA |
Dhuwur: | 20,7 mm |
dawa: | 15,87 mm |
Tipe produk: | Transistor IGBT |
Jumlah Paket Pabrik: | 240 |
Subkategori: | IGBT |
Jeneng dagang: | TRENCHSTOP |
Jembar: | 5,31 mm |
Bagian # Alias: | IKW50N65EH5 SP001257944 |
Bobot Unit: | 0,213383 oz |
Penawaran teknologi HighspeedH5
•Best-in-Classefficiency ing hardswitching topologi andsonant
•Plugandplayreplacement saka IGBT generasi sadurunge
• voltase breakdown 650V
•LowgatechargeQG
•IGBTdikemas kanthi lengkap RAPID1fastandsoftantiparallel diode
•Suhu sambungan maksimal175°C
•Kualifikasi miturut JEDEC kanggo aplikasi target
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/
•Uninterruptiblepowersupplies
•Solarconverters
•Weldingconverters
•Midtohighrangeswitchingfrequencyconverters